Technical Documents
Specifications
Brand
VishayProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
14A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.16Ω
Maximum Power Dissipation Pd
88W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
26nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
2.5V
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Height
4.83mm
Length
9.65mm
Standards/Approvals
IEC 61249-2-21, RoHS 2002/95/EC
Width
10.67mm
Number of Elements per Chip
1
Automotive Standard
No
Country of Origin
China
Product Details
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 160mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 88W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
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Each (In a Tube of 50) (Exc. VAT)
50
Price on asking
Each (In a Tube of 50) (Exc. VAT)
Stock information temporarily unavailable.
50
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Technical Documents
Specifications
Brand
VishayProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
14A
Maximum Drain Source Voltage Vds
100V
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.16Ω
Maximum Power Dissipation Pd
88W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
26nC
Maximum Gate Source Voltage Vgs
20V
Forward Voltage Vf
2.5V
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Height
4.83mm
Length
9.65mm
Standards/Approvals
IEC 61249-2-21, RoHS 2002/95/EC
Width
10.67mm
Number of Elements per Chip
1
Automotive Standard
No
Country of Origin
China
Product Details
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 160mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 88W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
