Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
69A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
38mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
400W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
185nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 66.76
€ 13.35 Each (Supplied in a Tube) (Exc. VAT)
Production pack (Tube)
5
€ 66.76
€ 13.35 Each (Supplied in a Tube) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
5
| Quantity | Unit price |
|---|---|
| 5 - 9 | € 13.35 |
| 10 - 24 | € 12.01 |
| 25 - 49 | € 11.71 |
| 50+ | € 11.40 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
69A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
38mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
400W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
185nC
Forward Voltage Vf
1.5V
Maximum Operating Temperature
150°C
Height
20.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


