Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maximum Operating Temperature
175°C
Length
15.9mm
Height
41.2mm
Standards/Approvals
RoHS
Width
5.1mm
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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Stock information temporarily unavailable.
$ 228.55
$ 7.618 Each (In a Tube of 30) (Exc. VAT)
30
$ 228.55
$ 7.618 Each (In a Tube of 30) (Exc. VAT)
Stock information temporarily unavailable.
30
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 120 | $ 7.618 | $ 228.55 |
| 150+ | $ 7.271 | $ 218.12 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maximum Operating Temperature
175°C
Length
15.9mm
Height
41.2mm
Standards/Approvals
RoHS
Width
5.1mm
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature.
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JOIN FOR FREE
No hidden fees!
