Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
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Stock information temporarily unavailable.
€ 23.09
€ 2.31 Each (Supplied in a Tube) (Exc. VAT)
Production pack (Tube)
10
€ 23.09
€ 2.31 Each (Supplied in a Tube) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
10
| Quantity | Unit price |
|---|---|
| 10 - 99 | € 2.31 |
| 100 - 499 | € 2.10 |
| 500 - 999 | € 1.97 |
| 1000+ | € 1.95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
10A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-220
Series
MDmesh K6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.6Ω
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
25.9nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
