Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
82nC
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
210W
Maximum Operating Temperature
150°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
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Stock information temporarily unavailable.
€ 278.53
€ 5.571 Each (Supplied in a Tube) (Exc. VAT)
Production pack (Tube)
50
€ 278.53
€ 5.571 Each (Supplied in a Tube) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 120 | € 5.571 | € 27.85 |
| 125+ | € 5.281 | € 26.40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
35A
Maximum Drain Source Voltage Vds
710V
Package Type
TO-220
Series
MDmesh M5
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
78mΩ
Channel Mode
Enhancement
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
82nC
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
210W
Maximum Operating Temperature
150°C
Height
15.75mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
