Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
STO67N60DM6
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
59mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
72.5nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
2.2mm
Length
11.48mm
Standards/Approvals
No
Width
9.8mm
Automotive Standard
No
Product Details
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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Stock information temporarily unavailable.
Price on asking
Each (In a Pack of 2) (Exc. VAT)
Standard
2
Price on asking
Each (In a Pack of 2) (Exc. VAT)
Stock information temporarily unavailable.
Standard
2
Ideate. Create. Collaborate
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220
Series
STO67N60DM6
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
59mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
72.5nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Operating Temperature
150°C
Height
2.2mm
Length
11.48mm
Standards/Approvals
No
Width
9.8mm
Automotive Standard
No
Product Details
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
