Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Series
STI28
Package Type
I2PAK
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
170W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Height
9.3mm
Length
10.4mm
Automotive Standard
No
Product Details
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
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Stock information temporarily unavailable.
€ 104.37
€ 2.087 Each (In a Tube of 50) (Exc. VAT)
50
€ 104.37
€ 2.087 Each (In a Tube of 50) (Exc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | € 2.087 | € 104.36 |
| 250 - 450 | € 2.036 | € 101.79 |
| 500+ | € 1.979 | € 98.97 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
22A
Maximum Drain Source Voltage Vds
650V
Series
STI28
Package Type
I2PAK
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
150mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.6V
Maximum Power Dissipation Pd
170W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
36nC
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
4.6mm
Height
9.3mm
Length
10.4mm
Automotive Standard
No
Product Details
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
