Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
2.6A
Maximum Drain Source Voltage Vds
1500V
Package Type
H2PAK-2
Series
STH4N150
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
10Ω
Channel Mode
MOSFET
Maximum Power Dissipation Pd
208W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
35.1nC
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
150°C
Transistor Configuration
N Channel Mosfet
Height
15.8mm
Length
10.4mm
Width
4.7mm
Automotive Standard
AEC-Q101
Country of Origin
China
Stock information temporarily unavailable.
€ 4.99
€ 4.99 Each (Exc. VAT)
1
€ 4.99
€ 4.99 Each (Exc. VAT)
Stock information temporarily unavailable.
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | € 4.99 |
| 10 - 99 | € 3.27 |
| 100 - 499 | € 2.42 |
| 500+ | € 2.13 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Power MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
2.6A
Maximum Drain Source Voltage Vds
1500V
Package Type
H2PAK-2
Series
STH4N150
Mount Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance Rds
10Ω
Channel Mode
MOSFET
Maximum Power Dissipation Pd
208W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
35.1nC
Maximum Gate Source Voltage Vgs
30V
Maximum Operating Temperature
150°C
Transistor Configuration
N Channel Mosfet
Height
15.8mm
Length
10.4mm
Width
4.7mm
Automotive Standard
AEC-Q101
Country of Origin
China