Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
80 V
Series
STripFET H7
Package Type
H2PAK-6
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
21 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
15.25mm
Transistor Material
Si
Length
10.4mm
Typical Gate Charge @ Vgs
193 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
4.8mm
Product Details
Stock information temporarily unavailable.
Price on asking
Each (In a Pack of 2) (Exc. VAT)
2
Price on asking
Each (In a Pack of 2) (Exc. VAT)
Stock information temporarily unavailable.
2
Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
80 V
Series
STripFET H7
Package Type
H2PAK-6
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
21 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
315 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
15.25mm
Transistor Material
Si
Length
10.4mm
Typical Gate Charge @ Vgs
193 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Height
4.8mm
Product Details