Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
RoHS
Width
6.2mm
Series
H
Energy Rating
221mJ
Automotive Standard
No
Country of Origin
China
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Stock information temporarily unavailable.
€ 6.57
€ 0.657 Each (In a Pack of 10) (Exc. VAT)
Standard
10
€ 6.57
€ 0.657 Each (In a Pack of 10) (Exc. VAT)
Stock information temporarily unavailable.
Standard
10
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | € 0.657 | € 6.57 |
| 100 - 490 | € 0.447 | € 4.47 |
| 500 - 990 | € 0.441 | € 4.41 |
| 1000 - 2490 | € 0.435 | € 4.35 |
| 2500+ | € 0.43 | € 4.30 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Trench Gate Field Stop IGBT
Maximum Continuous Collector Current Ic
10A
Maximum Collector Emitter Voltage Vceo
600V
Maximum Power Dissipation Pd
88W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Minimum Operating Temperature
-55°C
Maximum Collector Emitter Saturation Voltage VceSAT
1.95V
Maximum Operating Temperature
175°C
Height
2.4mm
Length
6.6mm
Standards/Approvals
RoHS
Width
6.2mm
Series
H
Energy Rating
221mJ
Automotive Standard
No
Country of Origin
China
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
