STMicroelectronics, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-263, Surface

This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required

• SCIS energy of 300 mJ @ TJ = 25 °C
• Parts are 100% tested in SCIS
• ESD gate-emitter protection
• Gate-collector high voltage clamping
• Logic level gate drive
• Very low saturation voltage
• High pulsed current capability
• Gate and gate-emitter resistor