Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
94nC
Maximum Power Dissipation Pd
389W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3V
Maximum Operating Temperature
200°C
Length
34.8mm
Height
5mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Stock information temporarily unavailable.
€ 22.81
€ 22.81 Each (Exc. VAT)
Standard
1
€ 22.81
€ 22.81 Each (Exc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | € 22.81 |
| 10 - 24 | € 22.24 |
| 25+ | € 21.75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
73mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
94nC
Maximum Power Dissipation Pd
389W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3V
Maximum Operating Temperature
200°C
Length
34.8mm
Height
5mm
Standards/Approvals
UL
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics silicon carbide Power MOSFET device has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
