Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
63nC
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.4V
Maximum Operating Temperature
200°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Stock information temporarily unavailable.
€ 16.12
€ 16.12 Each (Exc. VAT)
Standard
1
€ 16.12
€ 16.12 Each (Exc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | € 16.12 |
| 10 - 99 | € 14.44 |
| 100 - 1199 | € 14.27 |
| 1200+ | € 14.09 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Typical Gate Charge Qg @ Vgs
63nC
Maximum Power Dissipation Pd
290W
Minimum Operating Temperature
-55°C
Forward Voltage Vf
3.4V
Maximum Operating Temperature
200°C
Length
15.75mm
Height
34.95mm
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics automotive-grade silicon carbide power MOSFET has been developed using STs advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.