Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
650V
Package Type
Tape & Reel
Mount Type
Surface
Pin Count
7
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
22V
Typical Gate Charge Qg @ Vgs
29nC
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
14mm
Length
18.58mm
Height
3.5mm
Automotive Standard
No
Country of Origin
Morocco
Product Details
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Stock information temporarily unavailable.
€ 5,823.41
€ 9.706 Each (On a Reel of 600) (Exc. VAT)
600
€ 5,823.41
€ 9.706 Each (On a Reel of 600) (Exc. VAT)
Stock information temporarily unavailable.
600
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
650V
Package Type
Tape & Reel
Mount Type
Surface
Pin Count
7
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
22V
Typical Gate Charge Qg @ Vgs
29nC
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Standards/Approvals
No
Width
14mm
Length
18.58mm
Height
3.5mm
Automotive Standard
No
Country of Origin
Morocco
Product Details
The STMicroelectronics silicon carbide power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
