Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Package Type
LBB
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
1Ω
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
10V
Maximum Operating Temperature
150°C
Length
28.95mm
Height
2.1mm
Standards/Approvals
2002/95/EC
Width
5.85mm
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.
Stock information temporarily unavailable.
€ 172.52
€ 172.52 Each (Exc. VAT)
Standard
1
€ 172.52
€ 172.52 Each (Exc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | € 172.52 |
| 10 - 99 | € 169.50 |
| 100+ | € 167.43 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Dual N
Maximum Drain Source Voltage Vds
95V
Package Type
LBB
Mount Type
Surface
Pin Count
5
Maximum Drain Source Resistance Rds
1Ω
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
10V
Maximum Operating Temperature
150°C
Length
28.95mm
Height
2.1mm
Standards/Approvals
2002/95/EC
Width
5.85mm
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics 120 W LDMOS FET, designed for broadband commercial communications, TV broadcast, avionics and industrial applications with frequencies from HF to 1.5 GHz. It can be used in class AB/B and class C for all typical modulation formats.