Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type P, Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
6.5A
Maximum Drain Source Voltage Vds
650V
Series
MASTERG
Package Type
QFN-9
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
300mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Length
9mm
Height
1mm
Automotive Standard
No
Country of Origin
Thailand
Product Details
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
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Stock information temporarily unavailable.
€ 5.05
€ 5.05 Each (Exc. VAT)
Standard
1
€ 5.05
€ 5.05 Each (Exc. VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | € 5.05 |
| 10 - 24 | € 4.54 |
| 25 - 99 | € 4.48 |
| 100 - 249 | € 4.42 |
| 250+ | € 4.37 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type P, Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
6.5A
Maximum Drain Source Voltage Vds
650V
Series
MASTERG
Package Type
QFN-9
Mount Type
Surface
Pin Count
31
Maximum Drain Source Resistance Rds
300mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
1.5nC
Maximum Power Dissipation Pd
40mW
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
125°C
Standards/Approvals
RoHS, ECOPACK
Width
9mm
Length
9mm
Height
1mm
Automotive Standard
No
Country of Origin
Thailand
Product Details
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
