Technical Documents
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
N
Maximum Drain Source Voltage Vds
0.2V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Drain Source Resistance Rds
80Ω
Drain Source Current Ids
8 mA
Maximum Gate Source Voltage Vgs
-40V
Maximum Operating Temperature
150°C
Height
0.93mm
Length
2.92mm
Width
1.3mm
Standards/Approvals
No
Automotive Standard
No
Product Details
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Stock information temporarily unavailable.
€ 15.55
€ 0.156 Each (Supplied on a Reel) (Exc. VAT)
Production pack (Reel)
100
€ 15.55
€ 0.156 Each (Supplied on a Reel) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
100
| Quantity | Unit price | Per Reel |
|---|---|---|
| 100 - 950 | € 0.156 | € 7.78 |
| 1000 - 2950 | € 0.12 | € 6.02 |
| 3000 - 8950 | € 0.103 | € 5.15 |
| 9000+ | € 0.102 | € 5.09 |
Technical Documents
Specifications
Brand
onsemiProduct Type
JFET
Sub Type
N-Channel Switch
Channel Type
N
Maximum Drain Source Voltage Vds
0.2V
Configuration
Single
Mount Type
Surface
Package Type
SOT-23
Maximum Power Dissipation Pd
350mW
Pin Count
3
Minimum Operating Temperature
-55°C
Maximum Drain Source Resistance Rds
80Ω
Drain Source Current Ids
8 mA
Maximum Gate Source Voltage Vgs
-40V
Maximum Operating Temperature
150°C
Height
0.93mm
Length
2.92mm
Width
1.3mm
Standards/Approvals
No
Automotive Standard
No
Product Details
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.