Technical Documents
Specifications
Brand
onsemiMount Type
Through Hole
Product Type
Optocoupler
Output Type
Phototransistor
Maximum Forward Voltage
1.3V
Packaging
Tube
Number of Channels
2
Number of Pins
8
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
6%
Maximum Operating Temperature
100°C
Minimum Current Transfer Ratio
0.5%
Typical Fall Time
2.4μs
Standards/Approvals
EN, IEC, UL
Series
MCT
Automotive Standard
No
Product Details
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
Stock information temporarily unavailable.
€ 25.31
€ 0.506 Each (In a Tube of 50) (Exc. VAT)
50
€ 25.31
€ 0.506 Each (In a Tube of 50) (Exc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | € 0.506 | € 25.31 |
| 100 - 950 | € 0.296 | € 14.82 |
| 1000 - 1950 | € 0.289 | € 14.46 |
| 2000 - 9950 | € 0.282 | € 14.10 |
| 10000+ | € 0.275 | € 13.74 |
Technical Documents
Specifications
Brand
onsemiMount Type
Through Hole
Product Type
Optocoupler
Output Type
Phototransistor
Maximum Forward Voltage
1.3V
Packaging
Tube
Number of Channels
2
Number of Pins
8
Package Type
PDIP
Input Current Type
DC
Typical Rise Time
2.4μs
Maximum Input Current
10mA
Isolation Voltage
5kVrms
Minimum Operating Temperature
-55°C
Maximum Current Transfer Ratio
6%
Maximum Operating Temperature
100°C
Minimum Current Transfer Ratio
0.5%
Typical Fall Time
2.4μs
Standards/Approvals
EN, IEC, UL
Series
MCT
Automotive Standard
No
Product Details
The MCT9001 optocoupler has two channels for density applications. For four channel applications, two packages fit into a standard 16-pin DIP socket. Each channel is an NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode.
