Technical Documents
Specifications
Brand
InfineonProduct Type
FRAM
Memory Size
4kB
Organisation
512 x 8 bit
Interface Type
Serial-I2C (2 Wire)
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Mount Type
Surface
Package Type
SOIC
Pin Count
8
Length
4.97mm
Height
1.48mm
Width
3.98mm
Maximum Operating Temperature
85°C
Number of Bits per Word
8
Minimum Operating Temperature
-40°C
Automotive Standard
AEC-Q100
Number of Words
512
Country of Origin
United States
Product Details
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore Ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Price on asking
Each (In a Tube of 97) (Exc. VAT)
Stock information temporarily unavailable.
97
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Technical Documents
Specifications
Brand
InfineonProduct Type
FRAM
Memory Size
4kB
Organisation
512 x 8 bit
Interface Type
Serial-I2C (2 Wire)
Data Bus Width
8bit
Maximum Random Access Time
3000ns
Mount Type
Surface
Package Type
SOIC
Pin Count
8
Length
4.97mm
Height
1.48mm
Width
3.98mm
Maximum Operating Temperature
85°C
Number of Bits per Word
8
Minimum Operating Temperature
-40°C
Automotive Standard
AEC-Q100
Number of Words
512
Country of Origin
United States
Product Details
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore Ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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