Technical Documents
Specifications
Brand
InfineonProduct Type
FRAM
Memory Size
256kB
Organisation
32K x 8 Bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Mount Type
Surface
Maximum Clock Frequency
1MHz
Package Type
SOIC
Pin Count
28
Length
18.11mm
Standards/Approvals
No
Width
7.62mm
Height
2.37mm
Maximum Operating Temperature
85°C
Minimum Operating Temperature
-40°C
Number of Bits per Word
8
Maximum Supply Voltage
5.5V
Automotive Standard
AEC-Q100
Number of Words
32k
Minimum Supply Voltage
2.7V
Country of Origin
United States
Product Details
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Stock information temporarily unavailable.
€ 394.77
€ 14.621 Each (In a Tube of 27) (Exc. VAT)
27
€ 394.77
€ 14.621 Each (In a Tube of 27) (Exc. VAT)
Stock information temporarily unavailable.
27
| Quantity | Unit price | Per Tube |
|---|---|---|
| 27 - 27 | € 14.621 | € 394.77 |
| 54 - 81 | € 14.432 | € 389.65 |
| 108+ | € 12.867 | € 347.40 |
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JOIN FOR FREE
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Technical Documents
Specifications
Brand
InfineonProduct Type
FRAM
Memory Size
256kB
Organisation
32K x 8 Bit
Interface Type
Parallel
Data Bus Width
8bit
Maximum Random Access Time
70ns
Mount Type
Surface
Maximum Clock Frequency
1MHz
Package Type
SOIC
Pin Count
28
Length
18.11mm
Standards/Approvals
No
Width
7.62mm
Height
2.37mm
Maximum Operating Temperature
85°C
Minimum Operating Temperature
-40°C
Number of Bits per Word
8
Maximum Supply Voltage
5.5V
Automotive Standard
AEC-Q100
Number of Words
32k
Minimum Supply Voltage
2.7V
Country of Origin
United States
Product Details
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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JOIN FOR FREE
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