Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
8A
Maximum Collector Emitter Voltage Vceo
450V
Package Type
TO-220
Mount Type
Through Hole
Transistor Configuration
Single
Minimum Operating Temperature
-65°C
Maximum Power Dissipation Pd
70W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
12
Maximum Emitter Base Voltage VEBO
12V
Pin Count
3
Maximum Operating Temperature
150°C
Series
BUL1102E
Standards/Approvals
No
Length
10.4mm
Height
30.6mm
Automotive Standard
No
Product Details
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
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Stock information temporarily unavailable.
€ 45.70
€ 0.914 Each (In a Tube of 50) (Exc. VAT)
50
€ 45.70
€ 0.914 Each (In a Tube of 50) (Exc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 450 | € 0.914 | € 45.70 |
| 500 - 1200 | € 0.892 | € 44.59 |
| 1250+ | € 0.868 | € 43.42 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Bipolar Transistor
Maximum DC Collector Current Idc
8A
Maximum Collector Emitter Voltage Vceo
450V
Package Type
TO-220
Mount Type
Through Hole
Transistor Configuration
Single
Minimum Operating Temperature
-65°C
Maximum Power Dissipation Pd
70W
Transistor Polarity
NPN
Minimum DC Current Gain hFE
12
Maximum Emitter Base Voltage VEBO
12V
Pin Count
3
Maximum Operating Temperature
150°C
Series
BUL1102E
Standards/Approvals
No
Length
10.4mm
Height
30.6mm
Automotive Standard
No
Product Details
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial Planar technology. It uses a cellular emitter structure with Planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
