Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Package Type
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Series
STDRI
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.
Stock information temporarily unavailable.
€ 4,996.62
€ 1.999 Each (On a Reel of 2500) (Exc. VAT)
2500
€ 4,996.62
€ 1.999 Each (On a Reel of 2500) (Exc. VAT)
Stock information temporarily unavailable.
2500
| Quantity | Unit price | Per Reel |
|---|---|---|
| 2500 - 2500 | € 1.999 | € 4,996.62 |
| 5000+ | € 1.987 | € 4,967.40 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Gate Driver Module
Output Current
6A
Pin Count
16
Package Type
SO-16
Fall Time
5ns
Driver Type
Gate Driver
Minimum Supply Voltage
3.3V
Number of Drivers
2
Maximum Supply Voltage
5V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Series
STDRI
Standards/Approvals
No
Automotive Standard
No
Product Details
The STMicroelectronics STDRIVEG600 is a single chip half-bridge gate driver for enhancement mode GaN FETs or N-channel power MOSFET. The high-side section is designed to stand a voltage up to 600 V and is suitable for designs with bus voltage up to 500 V. The device is designed for driving high-speed GaN and Si FETs thanks to high current capability, short propagation delay and operation with supply voltage down to 5 V.