Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
Lead (Pb) Free package, ECOPACK
Series
H
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Stock information temporarily unavailable.
€ 5.69
€ 2.846 Each (In a Pack of 2) (Exc. VAT)
Standard
2
€ 5.69
€ 2.846 Each (In a Pack of 2) (Exc. VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 18 | € 2.846 | € 5.69 |
| 20 - 98 | € 2.776 | € 5.55 |
| 100 - 198 | € 2.712 | € 5.42 |
| 200+ | € 2.572 | € 5.14 |
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Documents
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current Ic
80A
Product Type
IGBT
Maximum Collector Emitter Voltage Vceo
650V
Maximum Power Dissipation Pd
283W
Package Type
TO-247
Mount Type
Through Hole
Channel Type
Type N
Pin Count
3
Maximum Gate Emitter Voltage VGEO
±20 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.3V
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
175°C
Height
20.15mm
Standards/Approvals
Lead (Pb) Free package, ECOPACK
Series
H
Automotive Standard
No
Product Details
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
