Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-65°C
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
4.37mm
Standards/Approvals
No
Automotive Standard
No
Product Details
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
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Stock information temporarily unavailable.
€ 3,506.40
€ 3.506 Each (On a Reel of 1000) (Exc. VAT)
1000
€ 3,506.40
€ 3.506 Each (On a Reel of 1000) (Exc. VAT)
Stock information temporarily unavailable.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MDmesh Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
800V
Package Type
TO-263
Series
STB11NM80
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
0.4Ω
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
43.6nC
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-65°C
Forward Voltage Vf
0.86V
Maximum Operating Temperature
150°C
Length
10.4mm
Height
4.37mm
Standards/Approvals
No
Automotive Standard
No
Product Details
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the company's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
