Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
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€ 14.50
€ 2.899 Each (In a Pack of 5) (Exc. VAT)
5
€ 14.50
€ 2.899 Each (In a Pack of 5) (Exc. VAT)
5
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | € 2.899 | € 14.50 |
25 - 45 | € 2.617 | € 13.08 |
50 - 120 | € 2.387 | € 11.94 |
125 - 245 | € 2.354 | € 11.77 |
250+ | € 2.327 | € 11.64 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
175 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
165 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
15.94mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Height
20.95mm
Forward Diode Voltage
1.7V
Country of Origin
Japan
Product details