Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
2.3mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
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€ 6.53
€ 1.306 Each (In a Pack of 5) (Exc. VAT)
5
€ 6.53
€ 1.306 Each (In a Pack of 5) (Exc. VAT)
5
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | € 1.306 | € 6.53 |
25 - 45 | € 1.177 | € 5.88 |
50 - 245 | € 1.131 | € 5.66 |
250 - 495 | € 1.084 | € 5.42 |
500+ | € 1.057 | € 5.29 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
11.1 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
440 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
6.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.7V
Height
2.3mm
Country of Origin
Japan
Product details