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N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXYS IXFN82N60P

RS Stock No.: 194-130Brand: IXYSManufacturers Part No.: IXFN82N60P
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

240 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

38.2mm

Width

25.07mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.6mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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€ 39.72

Each (Exc. VAT)

N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXYS IXFN82N60P

€ 39.72

Each (Exc. VAT)

N-Channel MOSFET, 72 A, 600 V, 4-Pin SOT-227 IXYS IXFN82N60P
Stock information temporarily unavailable.

Buy in bulk

QuantityUnit price
1 - 1€ 39.72
2 - 4€ 38.53
5+€ 37.74

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

72 A

Maximum Drain Source Voltage

600 V

Series

HiperFET, Polar

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.04 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

240 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

38.2mm

Width

25.07mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

9.6mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more