MOSFET Infineon IPD038N06NF2SATMA1, VDSS 60 V, ID 120 A, PG-TO252-3 de 3 pines, 2elementos
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Corriente Máxima Continua de Drenaje
120 A
Tensión Máxima Drenador-Fuente
60 V
Tipo de Encapsulado
PG-TO252-3
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
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€ 760,64
€ 0,38 Each (On a Reel of 2000) (Sin IVA)
2000
€ 760,64
€ 0,38 Each (On a Reel of 2000) (Sin IVA)
2000
Información de stock no disponible temporalmente.
Vuelva a verificar más tarde.
| Cantidad | Precio Unitario sin IVA | Per Rollo |
|---|---|---|
| 2000 - 2000 | € 0,38 | € 760,64 |
| 4000+ | € 0,371 | € 741,62 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Brand
InfineonTipo de Canal
N
Corriente Máxima Continua de Drenaje
120 A
Tensión Máxima Drenador-Fuente
60 V
Tipo de Encapsulado
PG-TO252-3
Tipo de montaje
Montaje superficial
Conteo de Pines
3
Modo de Canal
Mejora
Número de Elementos por Chip
2
Material del transistor
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products