MOSFET Fairchild Semiconductor FDP038AN06A0, VDSS 60 V, ID 17 A, TO-220AB de 3 pines, config. Simple
Documentos Técnicos
Especificaciones
Tipo de Canal
N
Maximum Continuous Drain Current
17 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
TO-220AB
Tipo de Montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
4 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
2V
Disipación de Potencia Máxima
310000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Material del transistor
Si
Carga Típica de Puerta @ Vgs
96 nC a 10 V
Número de Elementos por Chip
1
Temperatura Máxima de Funcionamiento
+175 °C
Longitud
10.67mm
Profundidad
4.83mm
Series
PowerTrench
Mínima Temperatura de Funcionamiento
-55 °C
Altura
9.65mm
País de Origen
China
Datos del producto
MOSFET de canal N PowerTrench®, de 10 A a 19,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
Estándar
1
P.O.A.
Estándar
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Documentos Técnicos
Especificaciones
Tipo de Canal
N
Maximum Continuous Drain Current
17 A
Tensión Máxima Drenador-Fuente
-60 V
Tipo de Encapsulado
TO-220AB
Tipo de Montaje
Through Hole
Conteo de Pines
3
Resistencia Máxima Drenador-Fuente
4 mΩ
Modo de Canal
Mejora
Tensión de umbral de puerta mínima
2V
Disipación de Potencia Máxima
310000 mW
Transistor Configuration
Single
Tensión Máxima Puerta-Fuente
±20 V
Material del transistor
Si
Carga Típica de Puerta @ Vgs
96 nC a 10 V
Número de Elementos por Chip
1
Temperatura Máxima de Funcionamiento
+175 °C
Longitud
10.67mm
Profundidad
4.83mm
Series
PowerTrench
Mínima Temperatura de Funcionamiento
-55 °C
Altura
9.65mm
País de Origen
China
Datos del producto
MOSFET de canal N PowerTrench®, de 10 A a 19,9 A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products