Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
10.4 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
10.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
7.67mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.39mm
Country of Origin
China
Product details
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Stock information temporarily unavailable.
Please check again later.
€ 0.784
Each (In a Pack of 2) (Exc. Vat)
Standard
2
€ 0.784
Each (In a Pack of 2) (Exc. Vat)
Standard
2
Buy in bulk
Quantity | Unit price | Per Pack |
---|---|---|
2 - 24 | € 0.784 | € 1.57 |
26+ | € 0.533 | € 1.06 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
10.4 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
10.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
7.67mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.39mm
Country of Origin
China
Product details