MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
Infineon IRF7343TRPBF N/P-channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion IRF7343PbF, 8-Pin SO Infineon N, P 3.4 A, 4.7 A 55 V 0.065 Ω, 0.17 Ω - 1V 20 V SO Surface Mount 8 - Depletion Power MOSFET 2 W 690 pF @ -25 V, 740 pF @ 25 V 2.3 nC @ 10 V, 24 nC @ 10 V 5 x 4 x 1.5mm 32 ns, 43 ns IRF7343PbF 8.3 ns, 14 ns - 4mm 1.5mm 5mm 1.2V - +150 °C 1 -55 °C -
Infineon IRF7463TRPBF N-channel MOSFET, 14 A, 30 V IRF7463, 8-Pin SOIC Infineon N 14 A 30 V 20 mΩ 2V 0.6V ±12 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 3150 pF @ 15 V 34 nC @ 4.5 V 5 x 4 x 1.5mm 28 ns IRF7463 16 ns 41s 4mm 1.5mm 5mm 1.3V - +150 °C 1 -55 °C -
Infineon IRF7809AVTRPBF N-channel MOSFET, 14.6 A, 30 V IRF7809AV, 8-Pin SO
  • £ 0.319
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Infineon N 14.6 A 30 V 9 mΩ - 1V ±12 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 3780 pF @ 16 V 41 nC @ 5 V 5 x 4 x 1.5mm 96 ns IRF7809AV 14 ns - 4mm 1.5mm 5mm 1.3V - +150 °C 1 -55 °C -
Infineon IRF9410TRPBF N-channel MOSFET, 7 A, 30 V IRF9410, 8-Pin SO
  • £ 0.174
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Infineon N 7 A 30 V 50 mΩ - 1V ±20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 550 pF @ 25 V 18 nC @ 10 V 5 x 4 x 1.5mm 23 ns IRF9410 7.3 ns 14s 4mm 1.5mm 5mm 1V - +150 °C 1 -55 °C -
Infineon IRF7805ZTRPBF N-channel MOSFET, 16 A, 30 V IRF7805Z, 8-Pin SO
  • £ 0.293
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Infineon N 16 A 30 V 8.7 mΩ 2.25V 1.35V ±20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 2080 pF @ 15 V 18 nC @ 4.5 V 5 x 4 x 1.5mm 14 ns IRF7805Z 11 ns 64S 4mm 1.5mm 5mm 1V - +150 °C 1 -55 °C -
Infineon IRF1010EZSTRLP N-channel MOSFET, 84 A, 60 V IRF1010EZS, 2 + Tab-Pin D2PAK
  • £ 0.441
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Infineon N 84 A 60 V 8.5 mΩ 4V 2V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 140 W 2810 pF @ 25 V 58 nC @ 10 V 10.67 x 9.65 x 4.83mm 38 ns IRF1010EZS 19 ns 200s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon BSR92PH6327XTSA1 P-channel MOSFET, 140 mA, 250 V BSR92P, 3-Pin SC-59 Infineon P 140 mA 250 V 20 Ω 1V 2V 20 V SC-59 Surface Mount 3 Single Enhancement Power MOSFET 500 mW 82 pF @ -25 V 3.6 nC @ 10 V 3 x 1.6 x 1.1mm 75 ns BSR92P 6.4 ns 0.3S 1.6mm 1.1mm 3mm 1.2V - +150 °C 1 -55 °C -
Infineon IRF9910TRPBF Dual N-channel MOSFET, 12 A, 20 V IRF9910, 8-Pin SO
  • £ 0.343
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Infineon N 12 A 20 V 18.3 mΩ 2.55V 1.65V ±20 V SO Surface Mount 8 - Enhancement Power MOSFET 2 W 1860 pF @ 10 V 15 nC @ 4.5 V 5 x 4 x 1.5mm 15 ns IRF9910 8.3 ns 27s 4mm 1.5mm 5mm 1V - +150 °C 2 -55 °C -
Infineon IRFL4310TRPBF N-channel MOSFET, 2.2 A, 100 V IRFL4310PbF, 3 + Tab-Pin SOT-223 Infineon N 2.2 A 100 V 200 mΩ 4V 2V 20 V SOT-223 Surface Mount 3 + Tab Single Enhancement Power MOSFET 2.1 W 330 pF @ 25 V 17 nC @ 10 V 6.7 x 3.7 x 1.8mm 34 ns IRFL4310PbF 7.8 ns 1.5s 3.7mm 1.8mm 6.7mm 1.3V - +150 °C 1 -55 °C -
Infineon IRF3707ZSTRLPBF N-channel MOSFET, 59 A, 30 V IRF3707ZS, 2 + Tab-Pin D2PAK
  • £ 0.739
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Infineon N 59 A 30 V 12.5 mΩ 2.25V 1.35V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 57 W 1210 pF @ 25 V 9.7 nC @ 4.5 V 10.67 x 9.65 x 4.83mm 12 ns IRF3707ZS 9.8 ns 81S 9.65mm 4.83mm 10.67mm 1V - +175 °C 1 -55 °C -
Infineon IPD200N15N3GATMA1 N-channel MOSFET, 50 A, 150 V IPD200N15N3 G, 3 + 2 Tab-Pin DPAK Infineon N 50 A 150 V 20 mΩ 4V 2V 20 V TO-252 Surface Mount 3 + 2 Tab Single Enhancement Power MOSFET 150 W 1820 pF @ 75 V 23 nC @ 10 V 10.36 x 9.45 x 4.57mm 23 ns IPD200N15N3 G 14 ns 57s 9.45mm 4.57mm 10.36mm 1.2V - +175 °C 1 -55 °C -
Infineon AUIRFZ24NSTRL N-channel MOSFET, 17 A, 55 V AUIRFZ24N, 2 + Tab-Pin D2PAK Infineon N 17 A 55 V 70 mΩ 4V 2V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 45 W 370 pF @ 25 V 20 nC @ 10 V 10.67 x 9.65 x 4.83mm 19 ns AUIRFZ24N 4.9 ns 4.5s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon IRF3710ZSTRLPBF N-channel MOSFET, 59 A, 100 V IRF3710ZS, 2 + Tab-Pin D2PAK Infineon N 59 A 100 V 18 mΩ 4V 2V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 160 W 2900 pF @ 25 V 82 nC @ 10 V 10.67 x 9.65 x 4.83mm 41 ns IRF3710ZS 17 ns 35s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon AUIRFSL4115 N-channel MOSFET, 99 A, 150 V AUIRF, 3-Pin TO-262 Infineon N 99 A 150 V 12.1 mΩ 5V 3V ±20 V TO-262 Through Hole 3 Single Enhancement Power MOSFET 375 W 5270 pF @ 50 V 77 nC @ 10 V 10.67 x 9.65 x 4.83mm 41 ns AUIRF 18 ns 97s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon IPP45P03P4L11AKSA1 P-channel MOSFET, 45 A, 30 V IPP45P03P4L-11, 3 + Tab-Pin TO-220 Infineon P 45 A 30 V 18.7 mΩ 2V 1V 5 V TO-220 Through Hole 3 + Tab Single Enhancement Power MOSFET 58 W 2900 pF @ -25 V 42 nC @ 10 V 10 x 4.4 x 15.65mm 45 ns IPP45P03P4L-11 7 ns - 4.4mm 15.65mm 10mm 1.3V - +175 °C 1 -55 °C -
Infineon IRF1407PBF N-channel MOSFET, 130 A, 75 V IRF1407PbF, 3 + Tab-Pin TO-220AB Infineon N 130 A 75 V 7.8 mΩ 4V 2V 20 V TO-220AB Through Hole 3 + Tab Single Enhancement Power MOSFET 330 W 5600 pF @ 25 V 160 nC @ 10 V 10.67 x 4.83 x 16.51mm 150 ns IRF1407PbF 11 ns 74s 4.83mm 16.51mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon IRF3710ZPBF N-channel MOSFET, 59 A, 100 V HEXFET, 3-Pin TO-220AB Infineon N 59 A 100 V 18 mΩ 4V 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 160 W 2900 pF@ 25 V 82 nC @ 10 V 10.54 x 4.69 x 8.77mm 41 ns HEXFET 17 ns - 4.69mm 8.77mm 10.54mm - - +175 °C 1 -55 °C Si
Infineon AUIRF1018E N-channel MOSFET, 79 A, 60 V HEXFET, 3-Pin TO-220AB Infineon N 79 A 60 V 8.4 mΩ 4V 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 110 W 2290 pF@ 50 V 46 nC @ 10 V 10.67 x 4.83 x 9.02mm 55 ns HEXFET 13 ns - 4.83mm 9.02mm 10.67mm - - +175 °C 1 -55 °C Si
Infineon AUIRF1324 N-channel MOSFET, 353 A, 24 V HEXFET, 3-Pin TO-220AB Infineon N 353 A 24 V 2 mΩ 4V 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 300 W 7590 pF@ 24 V 160 nC @ 10 V 10.66 x 4.82 x 9.02mm 83 ns HEXFET 17 ns - 4.82mm 9.02mm 10.66mm - - +175 °C 1 -55 °C Si
Infineon AUIRF1404 N-channel MOSFET, 202 A, 40 V HEXFET, 3-Pin TO-220AB Infineon N 202 A 40 V 4 mΩ 4V 2V -20 V, +20 V TO-220AB Through Hole 3 Single Enhancement Power MOSFET 333 W 5669 pF @ 25 V 131 nC @ 10 V 10.66 x 4.82 x 16.51mm 46 ns HEXFET 17 ns - 4.82mm 16.51mm 10.66mm - - +175 °C 1 -55 °C Si
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