MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material
Toshiba T2N7002BK Dual N-channel MOSFET, 400 mA, 60 V, 3-Pin SOT-23 Toshiba N 400 mA 60 V 1.75 Ω 2.1V 1.1V ±20 V SOT-23 Surface Mount 3 - Enhancement - 1 W 26 pF @ 10 V 0.39 nC @ 4.5 V 2.9 x 1.3 x 0.9mm 38 ns - 5.5 ns - 1.3mm 0.9mm 2.9mm 1.1V - +150 °C 2 - -
N-Channel MOSFET 100V 1.5A SOT-23-3
  • £ 0.164
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Taiwan Semiconductor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
N-Channel MOSFET 600V 0.03A SOT-23-3
  • £ 0.101
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Taiwan Semiconductor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
P-Channel Power MOSFET -60V -3.1A SOT-23
  • £ 0.071
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Taiwan Semiconductor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Nexperia PMV20XNER N-channel MOSFET, 7.2 A, 30 V PMV20XNE, 3-Pin SOT-23
  • £ 0.079
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Nexperia N 7.2 A 30 V 38 mΩ 0.9V 0.4V 12 V TO-236AB Surface Mount 3 Single Enhancement Trench MOSFET 6.94 W 1150 pF @ 15 V 12.4 nC @ 4.5 V 3 x 1.4 x 1mm 33 ns PMV20XNE 8 ns 11s 1.4mm 1mm 3mm - - +150 °C 1 -55 °C -
P-Channel MOSFET 30V SOT-23-3
  • £ 0.061
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Taiwan Semiconductor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
Toshiba SSM3K339R N-channel MOSFET, 2 A, 40 V, 3-Pin SOT-23F
  • £ 0.054
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Toshiba N 2 A 40 V 390 mΩ 1.2V - ±12 V SOT-23F Surface Mount 3 Single Enhancement - 2 W 130 pF @ 10 V 1.1 nC @ 4.2 V 2.9 x 1.8 x 0.7mm 8 ns - 13 ns - 1.8mm 0.7mm 2.9mm 1.2V - +150 °C 1 - -
Infineon IRF7343TRPBF N/P-channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion IRF7343PbF, 8-Pin SO Infineon N, P 3.4 A, 4.7 A 55 V 0.065 Ω, 0.17 Ω - 1V 20 V SO Surface Mount 8 - Depletion Power MOSFET 2 W 690 pF @ -25 V, 740 pF @ 25 V 2.3 nC @ 10 V, 24 nC @ 10 V 5 x 4 x 1.5mm 32 ns, 43 ns IRF7343PbF 8.3 ns, 14 ns - 4mm 1.5mm 5mm 1.2V - +150 °C 1 -55 °C -
Infineon IRF7463TRPBF N-channel MOSFET, 14 A, 30 V IRF7463, 8-Pin SOIC Infineon N 14 A 30 V 20 mΩ 2V 0.6V ±12 V SOIC Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 3150 pF @ 15 V 34 nC @ 4.5 V 5 x 4 x 1.5mm 28 ns IRF7463 16 ns 41s 4mm 1.5mm 5mm 1.3V - +150 °C 1 -55 °C -
Infineon IRF7809AVTRPBF N-channel MOSFET, 14.6 A, 30 V IRF7809AV, 8-Pin SO
  • £ 0.319
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Infineon N 14.6 A 30 V 9 mΩ - 1V ±12 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 3780 pF @ 16 V 41 nC @ 5 V 5 x 4 x 1.5mm 96 ns IRF7809AV 14 ns - 4mm 1.5mm 5mm 1.3V - +150 °C 1 -55 °C -
Infineon IRF9410TRPBF N-channel MOSFET, 7 A, 30 V IRF9410, 8-Pin SO
  • £ 0.174
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Infineon N 7 A 30 V 50 mΩ - 1V ±20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 550 pF @ 25 V 18 nC @ 10 V 5 x 4 x 1.5mm 23 ns IRF9410 7.3 ns 14s 4mm 1.5mm 5mm 1V - +150 °C 1 -55 °C -
Infineon IRF7805ZTRPBF N-channel MOSFET, 16 A, 30 V IRF7805Z, 8-Pin SO
  • £ 0.293
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Infineon N 16 A 30 V 8.7 mΩ 2.25V 1.35V ±20 V SO Surface Mount 8 Single Enhancement Power MOSFET 2.5 W 2080 pF @ 15 V 18 nC @ 4.5 V 5 x 4 x 1.5mm 14 ns IRF7805Z 11 ns 64S 4mm 1.5mm 5mm 1V - +150 °C 1 -55 °C -
Toshiba SSM3K37MFV,L3F(B N-channel MOSFET, 250 mA, 20 V, 3-Pin SOT-723
  • £ 0.025
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Toshiba N 250 mA 20 V 5.6 Ω 1V 0.35V ±10 V SOT-723 Surface Mount 3 Single Enhancement - 150 mW 12 pF @ 10 V - 0.8 x 1.2 x 0.5mm 36 ns - 18 ns - 1.2mm 0.5mm 0.8mm - - +150 °C 1 - -
Infineon IRF1010EZSTRLP N-channel MOSFET, 84 A, 60 V IRF1010EZS, 2 + Tab-Pin D2PAK
  • £ 0.441
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Infineon N 84 A 60 V 8.5 mΩ 4V 2V ±20 V D2PAK Surface Mount 2 + Tab Single Enhancement Power MOSFET 140 W 2810 pF @ 25 V 58 nC @ 10 V 10.67 x 9.65 x 4.83mm 38 ns IRF1010EZS 19 ns 200s 9.65mm 4.83mm 10.67mm 1.3V - +175 °C 1 -55 °C -
Infineon BSR92PH6327XTSA1 P-channel MOSFET, 140 mA, 250 V BSR92P, 3-Pin SC-59 Infineon P 140 mA 250 V 20 Ω 1V 2V 20 V SC-59 Surface Mount 3 Single Enhancement Power MOSFET 500 mW 82 pF @ -25 V 3.6 nC @ 10 V 3 x 1.6 x 1.1mm 75 ns BSR92P 6.4 ns 0.3S 1.6mm 1.1mm 3mm 1.2V - +150 °C 1 -55 °C -
Toshiba SSM3K09FU N-channel MOSFET, 400 mA, 30 V, 3-Pin SOT-323
  • £ 0.085
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Toshiba N 400 mA 30 V 1.7 Ω 1.8V 1.1V ±20 V SOT-323 Surface Mount 3 Single Enhancement - 150 mW 20 pF @ 5 V - 1.25 x 2 x 0.9mm 68 ns - 72 ns - 2mm 0.9mm 1.25mm - - +150 °C 1 - -
Toshiba SSM3K333R N-channel MOSFET, 6 A, 30 V, 3-Pin SOT-23F
  • £ 0.073
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Toshiba N 6 A 30 V 42 mΩ 2.5V 1.3V ±20 V SOT-23F Surface Mount 3 Single Enhancement - 2 W 436 pF @ 0 V 3.4 nC @ 4.5 V 2.9 x 1.8 x 0.8mm 9 ns - 12 ns - 1.8mm 0.8mm 2.9mm - - +150 °C 1 - -
Vishay SI2374DS-T1-GE3 N-channel MOSFET, 5.9 A, 20 V, 3-Pin SOT-363
  • £ 0.074
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Vishay N 5.9 A 20 V 0.041 Ω 1V 0.4V ±8 V SOT-363 Surface Mount 3 Single Enhancement Power MOSFET 1.7 W 735 pF 13.4 nC 3.04 x 1.4 x 1.02mm 16 ns - 10 ns 29s 1.4mm 1.02mm 3.04mm - - +150 °C 1 -55 °C -
Vishay SI3443DDV-T1-GE3 P-channel MOSFET, 4 A, 20 V, 6-Pin TSOP6
  • £ 0.075
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Vishay P 4 A 20 V 0.09 Ω -1.5V -0.6V ±12 V TSOP6 Surface Mount 6 Single Enhancement Power MOSFET 2.7 W 970 pF 20 nC 3.1 x 1.7 x 1mm 43 ns - 27 ns 14s 1.7mm 1mm 3.1mm - - +150 °C 1 -55 °C -
Vishay SI3457CDV-T1-GE3 P-channel MOSFET, 5.1 A, 30 V, 6-Pin TSOP6
  • £ 0.168
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Vishay P 5.1 A 30 V 0.013 Ω -3V -1V ±20 V TSOP6 Surface Mount 6 Single Enhancement Power MOSFET 3 W 450 pF 10 nC 3.1 x 1.7 x 1mm 20 ns - 40 ns 8s 1.7mm 1mm 3.1mm - - +150 °C 1 -55 °C -
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