MOSFETs

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
Si2319DDS-T1-GE3 P-Channel MOSFET, 3.6 A, 40 V TrenchFET, 3-Pin SOT-23 Vishay Siliconix Vishay Siliconix P 3.6 A 40 V 0.1 Ω 2.5V 1V ±20 V SOT-23 Surface Mount 3 Single Enhancement Power MOSFET 1.7 W 650 pF @ -20 V 12.5 nC @ 10 V 3.04 x 1.4 x 1.02mm 20 ns TrenchFET 30 ns 10s 1.4mm 1.02mm 3.04mm 1.2V - +150 °C 1 -55 °C Si -
SiSH402DN-T1-GE3 N-Channel MOSFET, 35 A, 30 V TrenchFET, 8-Pin 1212 Vishay Siliconix Vishay Siliconix N 35 A 30 V 0.008 Ω 1.15V 2.2V ±20 V 1212 Surface Mount 8 Single Enhancement Power MOSFET 52 W 1700 pF @ 15 V 28 nC @ 10 V 3.15 x 3.15 x 1.07mm 25 ns TrenchFET 25 ns 82s 3.15mm 1.07mm 3.15mm 1.2V - +150 °C 1 -55 °C Si -
FDMC007N08LCDC N-Channel MOSFET, 22 A, 80 V, 8-Pin PQFN ON Semiconductor
  • £ 0.965
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ON Semiconductor N 22 A 80 V 6.8 mΩ 2.5V 1V ±20 V PQFN Surface Mount 8 Single Enhancement Power MOSFET 57 W 2195 pF @ 40 V 31 nC @ 10 V 3.4 x 3.4 x 0.75mm 36 ns - 11 ns 80s 3.4mm 0.75mm 3.4mm 1.3V - +150 °C 1 -55 °C - -
FDMC010N08C N-Channel MOSFET, 51 A, 80 V, 8-Pin Power33 ON Semiconductor
  • £ 0.705
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ON Semiconductor N 51 A 80 V 10 mΩ 4V 2V ±20 V Power33 Surface Mount 8 Single Enhancement Power MOSFET 52 W 1070 pF @ 40 V 15 nC @ 10 V 3.4 x 3.4 x 0.75mm 17 ns - 9 ns 35s 3.4mm 0.75mm 3.4mm 1.3V - +150 °C 1 -55 °C - -
TN2106K1-G N-Channel MOSFET, 280 mA, 60 (Minimum) V TN2106, 3-Pin SOT-23 Microchip Technology
  • £ 0.277
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Microchip Technology N 280 mA 60 (Minimum) V 5 Ω 2V 0.6V 20 V TO-236AB Surface Mount 3 Single Enhancement Driver MOSFET 360 mW 35 pF @ 25 V - 3.04 x 1.4 x 1.02mm 6 ns TN2106 3 ns - 1.4mm 1.02mm 3.04mm 1.8V - +150 °C 1 -55 °C - -
1.1 V to 5.5 V, 3 A, Slew Rate Controlle Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
2A 1.2V Slewrate Controlled load switch
  • £ 0.166
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Vishay - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
FCD360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin DPAK ON Semiconductor
  • £ 0.502
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ON Semiconductor N 10 A 650 V 360 mΩ 4.5V 2.5V ±30 V TO-252 Surface Mount 3 Single Enhancement Power MOSFET 83 W 730 pF @ 400 V 18 nC @ 10 V 6.73 x 6.22 x 2.39mm 34 ns - 12 ns 6s 6.22mm 2.39mm 6.73mm 1.2V - +150 °C 1 -55 °C - -
FDD86250-F085 N-Channel MOSFET, 50 A, 150 V, 3-Pin DPAK ON Semiconductor
  • £ 0.481
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ON Semiconductor N 50 A 150 V 22 mΩ 4V 2V ±20 V TO-252 Surface Mount 3 Single Enhancement Power MOSFET 160 W 1900 pF @ 75 V 28 nC @ 10 V 6.73 x 6.22 x 2.39mm 23 ns - 14 ns - 6.22mm 2.39mm 6.73mm 1.25V - +175 °C 1 -55 °C - -
NTD5C434NT4G N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK ON Semiconductor ON Semiconductor N 160 A 40 V 2.1 mΩ 4V 2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 120 W 5400 pF @ 25 V 80.6 nC @ 10 V 6.73 x 6.22 x 2.25mm 43 ns - 15 ns 155s 6.22mm 2.25mm 6.73mm 1.2V - +175 °C 1 -55 °C - -
NTD5C648NLT4G N-Channel MOSFET, 91 A, 60 V, 3-Pin DPAK ON Semiconductor
  • £ 0.766
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ON Semiconductor N 91 A 60 V 4.1 mΩ 2.1V 1.2V ±20 V DPAK Surface Mount 3 Single Enhancement Power MOSFET 76 W 2900 pF @ 30 V 17 nC @ 4.5 6.73 x 6.22 x 2.25mm 47 ns - 21 ns 120s 6.22mm 2.25mm 6.73mm 1.2V - +175 °C 1 -55 °C - -
NVD5C454NT4G N-Channel MOSFET, 83 A, 40 V, 4-Pin DPAK ON Semiconductor
  • £ 0.322
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ON Semiconductor N 83 A 40 V 4.2 mΩ 4V 2V ±20 V DPAK Surface Mount 4 Single Enhancement Power MOSFET 56 W 1900 pF @ 25 V 32 nC @ 10 V 6.73 x 6.22 x 2.25mm 24 ns - 11 ns 80s 6.22mm 2.25mm 6.73mm 1.2V - +175 °C 1 -55 °C - -
FDBL86066-F085 N-Channel MOSFET, 240 A, 100 V, 8-Pin H-PSOF ON Semiconductor
  • £ 1.003
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ON Semiconductor N 240 A 100 V 4.1 mΩ 4V 2V ±20 V H-PSOF Surface Mount 8 Single Enhancement Power MOSFET 300 W 3240 pF @ 50 V 47 nC @ 10 V 9.9 x 11.78 x 2.4mm 36 ns - 18 ns - 11.78mm 2.4mm 9.9mm 1.25V - +175 °C 1 -55 °C - -
TP2540N8-G P-Channel MOSFET, 125 mA, 400 (Minimum) V TP2540, 3-Pin TO-243AA Microchip Technology
  • £ 0.853
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Microchip Technology P 125 mA 400 (Minimum) V 30 Ω 2.4V 1V 20 V TO-243AA Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 60 pF @ -25 V - 4.6 x 2.6 x 1.6mm 20 (Maximum) ns TP2540 10 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.8V - +150 °C 1 -55 °C - -
TN2540N8-G N-Channel MOSFET, 260 mA, 400 (Minimum) V TN2540, 3-Pin TO-243AA Microchip Technology Microchip Technology N 260 mA 400 (Minimum) V 12 Ω 2V 0.6V 20 V TO-243AA Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 95 pF @ 25 V - 4.6 x 2.6 x 1.6mm 25 (Maximum) ns TN2540 20 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.8V - +150 °C 1 -55 °C - -
VN2460N8-G N-Channel MOSFET, 200 mA, 600 (Minimum) V VN2460, 3-Pin TO-243AA Microchip Technology
  • £ 0.668
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Microchip Technology N 200 mA 600 (Minimum) V 25 Ω 4V 1.5V 20 V TO-243AA Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 150 (Maximum) pF @ 25 V - 4.6 x 2.6 x 1.6mm 25 (Maximum) ns VN2460 10 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.5V - +150 °C 1 -55 °C - -
VP2450N8-G P-Channel MOSFET, 160 mA, 500 (Minimum) V VP2450, 3-Pin SOT-89 Microchip Technology
  • £ 0.935
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Microchip Technology P 160 mA 500 (Minimum) V 35 Ω 3.5V 1.5V 20 V SOT-89 Surface Mount 3 Single Enhancement Driver MOSFET 1.6 W 190 (Maximum) pF @ -25 V - 4.6 x 2.6 x 1.6mm 45 (Maximum) ns VP2450 10 (Maximum) ns - 2.6mm 1.6mm 4.6mm 1.8V - +150 °C 1 -55 °C - -
FCU360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK ON Semiconductor ON Semiconductor N 10 A 650 V 360 mΩ 4.5V 2.5V ±30 V IPAK Through Hole 3 Single Enhancement Power MOSFET 83 W 730 pF @ 400 V 18 nC @ 10 V 6.8 x 2.5 x 6.3mm 34 ns - 12 ns 6s 2.5mm 6.3mm 6.8mm 1.2V - +150 °C 1 -55 °C - -
2N7000-G N-Channel MOSFET, 200 mA, 60 (Minimum) V 2N7000, 3-Pin TO-92 Microchip Technology Microchip Technology N 200 mA 60 (Minimum) V 5.3 Ω 3V 0.8V 30 V TO-92 Through Hole 3 Single Enhancement Driver MOSFET 1 W 60 (Maximum) pF @ 25 V - 0.2 x 0.16 x 0.21in 10 (Maximum) ns 2N7000 10 (Maximum) ns - 4.06mm 5.33mm 5.08mm 0.85V - +150 °C 1 -55 °C - -
NTMFD5C674NLT1G Dual N-Channel MOSFET, 42 A, 60 V, 8-Pin DFN ON Semiconductor
  • £ 0.582
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ON Semiconductor N 42 A 60 V 14.4 mΩ 2.2V 1.2V ±20 V DFN Surface Mount 8 - Enhancement Power MOSFET 37 W 640 pF @ 25 V 4.7 nC @ 4.5 V 5.1 x 6.1 x 1.05mm 18.6 ns - 9.4 ns 27.5S 6.1mm 1.05mm 5.1mm 1.2V - +175 °C 2 -55 °C - -
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