MOSFET Transistors

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Part Details Brand Channel Type Maximum Continuous Drain Current Maximum Drain Source Voltage Maximum Drain Source Resistance Maximum Gate Threshold Voltage Minimum Gate Threshold Voltage Maximum Gate Source Voltage Package Type Mounting Type Pin Count Transistor Configuration Channel Mode Category Maximum Power Dissipation Typical Input Capacitance @ Vds Typical Gate Charge @ Vgs Dimensions Typical Turn-Off Delay Time Series Typical Turn-On Delay Time Forward Transconductance Width Height Length Forward Diode Voltage Typical Power Gain Maximum Operating Temperature Number of Elements per Chip Minimum Operating Temperature Transistor Material Automotive Standard
Taiwan Semi TSM4946DCS RLG N-Channel MOSFET, 4.5 A, 60 V, 8-Pin SOP
  • £ 0.322
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Taiwan Semiconductor N 4.5 A 60 V 75 mΩ 3V 1V ±20 V SOP Surface Mount 8 Single Enhancement DC/DC Converter 2.4 W 910 pF @ 24 V 19 nC @ 10 V 5 x 4 x 1.5mm 36 ns - 13 ns 13s 4mm 1.5mm 5mm 1.2V - +150 °C 1 -55 °C - -
Taiwan Semi TSM120N06LCS RLG N-Channel MOSFET, 23 A, 60 V, 8-Pin SOP
  • £ 0.238
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Taiwan Semiconductor N 23 A 60 V 15 mΩ 2.5V 1.2V ±20 V SOP Surface Mount 8 Single Enhancement Power MOSFET 12.5 W 2193 pF @ 30 V 19 nC @ 4.5 V, 37 nC @ 10 V 4.85 x 3.9 x 1.55mm 23 ns - 6.4 ns 38s 3.9mm 1.55mm 4.85mm 1V - +150 °C 1 -55 °C - -
Taiwan Semi TSM1NB60CH C5G N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK
  • £ 0.207
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Taiwan Semiconductor N 1 A 600 V 10 Ω 4.5V 2.5V ±30 V TO-251 Through Hole 3 Single Enhancement Power MOSFET 39 W 138 pF @ 25 V 6.1 nC @ 10 V 6.6 x 2.3 x 6.1mm 15.3 ns - 7.7 ns - 2.3mm 6.1mm 6.6mm 1.4V - +150 °C 1 -55 °C - -
Taiwan Semi TSM3N80CH C5G N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK
  • £ 0.473
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Taiwan Semiconductor N 3 A 800 V 4.2 mΩ 4V 2V ±30 V TO-251 Through Hole 3 Single Enhancement Power MOSFET 94 W 696 pF @ 25 V 19 nC @ 10 V 6.5 x 2.3 x 7mm 106 ns - 48 ns - 2.3mm 7mm 6.5mm 1.5V - +150 °C 1 -55 °C - -
Taiwan Semi TSM126CX RFG N-Channel MOSFET, 30 mA, 600 V Depletion, 3-Pin SOT-23
  • £ 0.121
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Taiwan Semiconductor N 30 mA 600 V 800 Ω 1V 2.7V ±20 V SOT-23 Surface Mount 3 Single Depletion - 500 mW 51.42 pF @ 25 V 1.18 nC @ 5 V 2.9 x 1.6 x 1.1mm 57.2 ns - 10.01 ns 0.01S 1.6mm 1.1mm 2.9mm 1.2V - +150 °C 1 -55 °C - -
Taiwan Semi TSM2328CX RFG N-Channel MOSFET, 1.5 A, 100 V, 3-Pin SOT-23
  • £ 0.197
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Taiwan Semiconductor N 1.5 A 100 V 250 mΩ 2.5V 1V ±20 V SOT-23 Surface Mount 3 Single Enhancement - 1.38 W 975 pF @ 25 V 11.1 nC @ 5 V 2.9 x 1.6 x 1.1mm 26.8 ns - 9 ns - 1.6mm 1.1mm 2.9mm - - +150 °C 1 - - -
Taiwan Semi TSM2308CX RFG N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-23 Taiwan Semiconductor N 3 A 60 V 192 mΩ 2.5V 1.2V ±20 V SOT-23 Surface Mount 3 Single Enhancement - 1.25 W 511 pF @ 15 V 3.99 nC @ 4.5 V 3 x 1.4 x 1.05mm 14.2 ns - 5.3 ns - 1.4mm 1.05mm 3mm 1.2V - +150 °C 1 -55 °C - -
Taiwan Semi TSM2303CX RFG P-Channel MOSFET, 1.3 A, 30 V, 3-Pin SOT-23 Taiwan Semiconductor P 1.3 A 30 V 300 mΩ 3V 1V ±20 V SOT-23 Surface Mount 3 Single Enhancement - 700 mW 565 pF @ -10 V 10 nC @ 4.5 V 3.1 x 1.7 x 1.2mm 27 ns - 10 ns 5s 1.7mm 1.2mm 3.1mm 1.2V - +150 °C 1 -55 °C - -
Infineon IPD25CN10NGATMA1 N-Channel MOSFET, 35 A, 100 V IPD25CN10N G, 3 + 2 Tab-Pin DPAK Infineon N 35 A 100 V 26 mΩ 4V 2V 20 V TO-252 Surface Mount 3 + 2 Tab Single Enhancement Power MOSFET 71 W 1560 pF @ 50 V 23 nC @ 10 V 6.73 x 7.47 x 2.41mm 13 ns IPD25CN10N G 10 ns 38s 7.47mm 2.41mm 6.73mm 1.2V - +175 °C 1 -55 °C - -
Taiwan Semi TSM060N03CP ROG N-Channel MOSFET, 80 A, 30 V, 3 + Tab-Pin DPAK
  • £ 0.209
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Taiwan Semiconductor N 80 A 30 V 9 mΩ 2.5V 1V ±20 V TO-252 Surface Mount 3 + Tab Single Enhancement Power MOSFET 54 W 1160 pF @ 25 V 11.1 nC @ 4.5 V 6.5 x 5.8 x 2.3mm 35.2 ns - 7.5 ns 18s 5.8mm 2.3mm 6.5mm 1V - +150 °C 1 - - -
Taiwan Semi TSM230N06CP ROG N-Channel MOSFET, 50 A, 60 V, 3 + Tab-Pin DPAK
  • £ 0.212
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Taiwan Semiconductor N 50 A 60 V 28 mΩ 2.5V 1.2V ±20 V TO-252 Surface Mount 3 + Tab Single Enhancement Power MOSFET 53 W 1680 pF @ 25 V 28 nC @ 10 V 6.5 x 5.8 x 2.3mm 34 ns - 7.2 ns 9s 5.8mm 2.3mm 6.5mm 1V - +150 °C 1 - - -
Taiwan Semi TSM4425CS RLG N-Channel MOSFET, 11 A, 30 V, 8-Pin SOP
  • £ 0.354
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Taiwan Semiconductor N 11 A 30 V 19 mΩ 3V 1V ±20 V SOP Surface Mount 8 Single Enhancement - 2.5 W 3680 pF @ -8 V 64 nC @ 10 V 4.85 x 3.9 x 1.37mm 100 ns - 15 ns 23s 3.9mm 1.37mm 4.85mm 1.3V - +150 °C 1 -55 °C - -
Taiwan Semi TSM4436CS RLG N-Channel MOSFET, 8 A, 60 V, 8-Pin SOP
  • £ 0.193
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Taiwan Semiconductor N 8 A 60 V 43 mΩ 3V 1V ±20 V SOP Surface Mount 8 Single Enhancement DC/DC Converter 2.5 W 1100 pF @ 30 V 10.5 nC @ 4.5 V 5 x 4 x 1.5mm 25 ns - 10 ns 13s 4mm 1.5mm 5mm 1.2V - +150 °C 1 -55 °C - -
Taiwan Semi TSM4806CS RLG N-Channel MOSFET, 28 A, 20 V, 8-Pin SOP
  • £ 0.106
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Taiwan Semiconductor N 28 A 20 V 31 mΩ 1V 0.3V ±8 V SOP Surface Mount 8 Single Enhancement - 2 W 961 pF @ 15 V 12.3 nC @ 4.5 V 4.85 x 3.9 x 0.8mm 28 ns - 3.02 ns 27s 3.9mm 0.8mm 4.85mm 1.2V - +150 °C 1 -55 °C - -
Taiwan Semi TSM4NB60CP ROG N-Channel MOSFET, 4 A, 600 V, 3 + Tab-Pin DPAK
  • £ 0.266
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Taiwan Semiconductor N 4 A 600 V 2.5 Ω 4.5V 2.5V ±30 V TO-252 Surface Mount 3 + Tab Single Enhancement Power MOSFET 50 W 500 pF @ 25 V 14.5 nC @ 10 V 6.5 x 6.1 x 2.28mm 30 ns - 11 ns - 6.1mm 2.28mm 6.5mm 1.13V - +150 °C 1 -55 °C - -
Taiwan Semi TSM6N60CP ROG N-Channel MOSFET, 6 A, 600 V, 3 + Tab-Pin DPAK
  • £ 0.462
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Taiwan Semiconductor N 6 A 600 V 1.25 Ω 4V 2V ±30 V TO-252 Surface Mount 3 + Tab Single Enhancement Power MOSFET 89 W 1248 pF @ 25 V 20.7 nC @ 10 V 6.5 x 5.8 x 2.3mm 57 ns - 21 ns - 5.8mm 2.3mm 6.5mm 1.5V - +150 °C 1 - - -
Toshiba TPH1R005PL N-Channel MOSFET, 150 A, 45 V, 8-Pin SOP
  • £ 1.021
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Toshiba N 150 A 45 V 1.7 mΩ 2.4V 1.4V ±20 V SOP Surface Mount 8 Single Enhancement Power MOSFET 170 W 7700 pF @ 22.5 V 122 nC @ 10 V 5 x 5 x 0.95mm 75 ns - 29 ns - 5mm 0.95mm 5mm 1.2V - +175 °C 1 - - -
Toshiba TPH3300CNH N-Channel MOSFET, 29 A, 150 V, 8-Pin SOP Toshiba N 29 A 150 V 33 mΩ 4V 2V ±20 V SOP Surface Mount 8 Single Enhancement Power MOSFET 57 W 810 pF @ 75 V 10.6 nC @ 10 V 5 x 5 x 0.95mm 17 ns - 16 ns - 5mm 0.95mm 5mm 1.2V - +150 °C 1 - - -
Toshiba TPHR6503PL N-Channel MOSFET, 393 A, 30 V, 8-Pin SOP Toshiba N 393 A 30 V 890 μΩ 2.1V 1.1V ±20 V SOP Surface Mount 8 Single Enhancement Power MOSFET 170 W 7700 pF @ 15 V 110 nC @ 10 V 5 x 5 x 0.95mm 100 ns - 36 ns - 5mm 0.95mm 5mm 1.2V - +175 °C 1 - - -
Toshiba TPN14006NH N-Channel MOSFET, 65 A, 60 V, 8-Pin TSON Toshiba N 65 A 60 V 41 mΩ 4V 2V ±20 V TSON Surface Mount 8 Single Enhancement Power MOSFET 30 W 1000 pF @ 30 V 15 nC @ 10 V 3.1 x 3.1 x 0.85mm 18 ns - 18 ns - 3.1mm 0.85mm 3.1mm 1.2V - +150 °C 1 - - -
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