IGBT Transistors

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Part Details Brand Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height Dimensions Gate Capacitance Energy Rating Maximum Operating Temperature Minimum Operating Temperature Automotive Standard
STMicroelectronics STGW8M120DF3 IGBT, 16 A @ +25°C 1200 V, 3-Pin TO STMicroelectronics 16 A @ +25°C 1200 V ±20V 167 W 1 TO Through Hole N 3 1MHz Single 15.75mm 5.15mm 20.1mm 15.75 x 5.15 x 20.15mm 542pF 1.24mJ +175 °C -55 °C -
STMicroelectronics STGWT15H60F IGBT, 30 A @ +25°C 600 V, 3-Pin TO STMicroelectronics 30 A @ +25°C 600 V ±20V 115 W 1 TO Through Hole N 3 1MHz Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm 1952pF 553µJ +175 °C -55 °C -
Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247 Infineon 80 A 1200 V ±20V 429 W 1 TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm - 2.02mJ +175 °C -40 °C -
Infineon IHW40N120R3FKSA1 IGBT, 80 A 1200 V, 3-Pin TO-247 Infineon 80 A 1200 V ±20V 429 W 1 TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm - 2.02mJ +175 °C -40 °C -
Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220 Infineon 41 A 600 V ±20V 166 W 1 TO-220 Through Hole N 3 - Single 10.36mm 4.57mm 15.95mm 10.36 x 4.57 x 15.95mm - 0.77mJ +175 °C -40 °C -
Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220 Infineon 41 A 600 V ±20V 166 W 1 TO-220 Through Hole N 3 - Single 10.36mm 4.57mm 15.95mm 10.36 x 4.57 x 15.95mm - 0.77mJ +175 °C -40 °C -
ROHM RGT16NS65DGC9 P-Channel IGBT, 16 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • RS Stock No. 171-5345
  • Brand ROHM
  • Mfr. Part No. RGT16NS65DGC9
ROHM 16 A 650 (Minimum) V 30V 94 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 450pF - +175 °C -40 °C -
ROHM RGT16NS65DGC9 P-Channel IGBT, 16 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • RS Stock No. 171-5506
  • Brand ROHM
  • Mfr. Part No. RGT16NS65DGC9
ROHM 16 A 650 (Minimum) V 30V 94 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 450pF - +175 °C -40 °C -
ROHM RGT30NS65DGC9 P-Channel IGBT, 30 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • £ 0.622
  • Each (On a Reel of 1000)
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  • RS Stock No. 171-5347
  • Brand ROHM
  • Mfr. Part No. RGT30NS65DGC9
ROHM 30 A 650 (Minimum) V 30V 133 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 780pF - +175 °C -40 °C -
ROHM RGT30NS65DGC9 P-Channel IGBT, 30 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • RS Stock No. 171-5593
  • Brand ROHM
  • Mfr. Part No. RGT30NS65DGC9
ROHM 30 A 650 (Minimum) V 30V 133 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 780pF - +175 °C -40 °C -
ROHM RGT40NS65DGC9 P-Channel IGBT, 40 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • RS Stock No. 171-5627
  • Brand ROHM
  • Mfr. Part No. RGT40NS65DGC9
ROHM 40 A 650 (Minimum) V 30V 161 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 1070pF - +175 °C -40 °C -
ROHM RGT40NS65DGC9 P-Channel IGBT, 40 A 650 (Minimum) V, 3+Tab-Pin I2PAK
  • £ 0.716
  • Each (On a Reel of 1000)
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  • RS Stock No. 171-5349
  • Brand ROHM
  • Mfr. Part No. RGT40NS65DGC9
ROHM 40 A 650 (Minimum) V 30V 161 W 1 TO-262 Through Hole P 3+Tab - Single 10.1mm 4.5mm 9mm 10.1 x 4.5 x 9mm 1070pF - +175 °C -40 °C -
STMicroelectronics STGW8M120DF3 IGBT, 16 A @ +25°C 1200 V, 3-Pin TO STMicroelectronics 16 A @ +25°C 1200 V ±20V 167 W 1 TO Through Hole N 3 1MHz Single 15.75mm 5.15mm 20.1mm 15.75 x 5.15 x 20.15mm 542pF 1.24mJ +175 °C -55 °C -
STMicroelectronics STGWT15H60F IGBT, 30 A @ +25°C 600 V, 3-Pin TO STMicroelectronics 30 A @ +25°C 600 V ±20V 115 W 1 TO Through Hole N 3 1MHz Single 15.8mm 5mm 20.1mm 15.8 x 5 x 20.1mm 1952pF 553µJ +175 °C -55 °C -
STMicroelectronics STGD18N40LZT4 IGBT, 30 A 420 V, 3-Pin DPAK (TO-252) STMicroelectronics 30 A 420 V 16V 125 W - DPAK (TO-252) Surface Mount N 3 1MHz Single 6.6mm 6.2mm 2.4mm 6.6 x 6.2 x 2.4mm - - +175 °C -55 °C -
STMicroelectronics STGD19N40LZ IGBT, 25 A 425 V, 3-Pin DPAK (TO-252) STMicroelectronics 25 A 425 V ±16V 125 W - DPAK (TO-252) Surface Mount N 3 1MHz Single 6.6mm 6.2mm 2.4mm 6.6 x 6.2 x 2.4mm - - +175 °C -55 °C -
Infineon IGW75N60H3FKSA1 IGBT, 75 A 600 V, 3-Pin TO-247 Infineon 75 A 600 V ±20V 428 W - TO-247 Through Hole N 3 - Single 16.13mm 5.21mm 21.1mm 16.13 x 5.21 x 21.1mm 4620pF 6.2mJ +175 °C -40 °C -
ON Semiconductor FGL40N120ANDTU IGBT, 64 A 1200 V, 3-Pin TO-264 ON Semiconductor 64 A 1200 V ±25V - - TO-264 Through Hole N 3 - Single 20mm 5mm 26mm 20 x 5 x 26mm - - +150 °C -55 °C -
STMicroelectronics STGD5H60DF IGBT, 10 A 600 V, 3-Pin DPAK (TO-252) STMicroelectronics 10 A 600 V ±20V 83 W - DPAK (TO-252) Surface Mount N 3 - Single 6.6mm 6.2mm 2.4mm 6.6 x 6.2 x 2.4mm 855pF 221µJ +175 °C -55 °C -
ON Semiconductor FGD3N60LSDTM IGBT, 6 A 600 V, 3-Pin DPAK (TO-252) ON Semiconductor 6 A 600 V ±25V 40 W - DPAK (TO-252) Surface Mount N 3 - Single 6.73mm 6.22mm 2.39mm 6.73 x 6.22 x 2.39mm - - +150 °C -55 °C -
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