SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

RS Stock No.: 192-3382Brand: WolfspeedManufacturers Part No.: C3M0280090J
brand-logo
View all in MOSFETs

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Typical Gate Charge @ Vgs

9.5 nC @ 4/15V

Width

9.12mm

Number of Elements per Chip

1

Height

4.57mm

Minimum Operating Temperature

-55 °C

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

€ 4.547

Each (In a Tube of 50) (Exc. Vat)

SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J

€ 4.547

Each (In a Tube of 50) (Exc. Vat)

SiC N-Channel MOSFET, 11 A, 900 V, 7-Pin D2PAK Wolfspeed C3M0280090J
Stock information temporarily unavailable.

Buy in bulk

QuantityUnit pricePer Tube
50 - 50€ 4.547€ 227.37
100+€ 4.433€ 221.65

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

900 V

Package Type

TO-263-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, 18 V

Maximum Operating Temperature

+150 °C

Transistor Material

SiC

Length

10.23mm

Typical Gate Charge @ Vgs

9.5 nC @ 4/15V

Width

9.12mm

Number of Elements per Chip

1

Height

4.57mm

Minimum Operating Temperature

-55 °C