Technical Document
Specifications
Brand
VishayMounting Type
Surface Mount
Package Type
D2PAK (TO-263)
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Switching
Diode Type
Silicon Junction
Pin Count
3
Maximum Forward Voltage Drop
3.9V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
80ns
Peak Non-Repetitive Forward Surge Current
80A
Product details
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Features
Ultrafast recovery time
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing
Diodes and Rectifiers, Vishay Semiconductor
Stock information temporarily unavailable.
Price on asking
Standard
1
Price on asking
Stock information temporarily unavailable.
Standard
1
Technical Document
Specifications
Brand
VishayMounting Type
Surface Mount
Package Type
D2PAK (TO-263)
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Switching
Diode Type
Silicon Junction
Pin Count
3
Maximum Forward Voltage Drop
3.9V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
80ns
Peak Non-Repetitive Forward Surge Current
80A
Product details
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Features
Ultrafast recovery time
Ultrasoft recovery
Very low IRRM
Very low Qrr
Reduced radio frequency interference (RFI) and electromagnetic interference (EMI)
Reduced power loss in diode and switching transistor
Reduced snubbing


