Vishay TrenchFET Dual N-Channel MOSFET, 51.4 A, 100 V, 8-Pin PowerPAK SO-8 SiR876BDP-T1-RE3

RS Stock No.: 228-2912PBrand: VishayManufacturers Part No.: SiR876BDP-T1-RE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

51.4 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0108 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Transistor Material

Si

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Stock information temporarily unavailable.

€ 96.80

€ 0.968 Each (Supplied on a Reel) (Exc. VAT)

Vishay TrenchFET Dual N-Channel MOSFET, 51.4 A, 100 V, 8-Pin PowerPAK SO-8 SiR876BDP-T1-RE3
Select packaging type

€ 96.80

€ 0.968 Each (Supplied on a Reel) (Exc. VAT)

Vishay TrenchFET Dual N-Channel MOSFET, 51.4 A, 100 V, 8-Pin PowerPAK SO-8 SiR876BDP-T1-RE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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QuantityUnit pricePer Reel
100 - 240€ 0.968€ 9.68
250 - 490€ 0.875€ 8.75
500 - 990€ 0.824€ 8.24
1000+€ 0.772€ 7.72

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Technical Document

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

51.4 A

Maximum Drain Source Voltage

100 V

Series

TrenchFET

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.0108 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Number of Elements per Chip

2

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more