Vishay 100V 10A, Schottky Diode, 2-Pin TO-220AC MBR10100-E3/4W

Technical Document
Specifications
Brand
VishayMounting Type
Through Hole
Package Type
TO-220AC
Maximum Continuous Forward Current
10A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
150A
Country of Origin
China
Product details
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage
Schottky Rectifiers, Vishay Semiconductor
Price on asking
Each (In a Pack of 10) (Exc. VAT)
Standard
10
Price on asking
Each (In a Pack of 10) (Exc. VAT)
Stock information temporarily unavailable.
Standard
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
VishayMounting Type
Through Hole
Package Type
TO-220AC
Maximum Continuous Forward Current
10A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
150A
Country of Origin
China
Product details
TMBS - Trench MOS Barrier Schottky Rectifiers, Up to 20A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Features
Patented Trench Structure
Improved efficiency in AC/DC Switched mode-power supplies and DC/DC converters
High power density and low forward voltage

