Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 81.60
€ 0.816 Each (Supplied in a Tube) (Exc. VAT)
Production pack (Tube)
100
€ 81.60
€ 0.816 Each (Supplied in a Tube) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
100
Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 100 - 240 | € 0.816 | € 8.16 |
| 250 - 490 | € 0.782 | € 7.82 |
| 500 - 990 | € 0.694 | € 6.94 |
| 1000+ | € 0.651 | € 6.51 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
25 nC @ 10 V
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


