Technical Document
Specifications
Brand
VishayProduct Type
Power MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Mount Type
Surface
Maximum Drain Source Resistance Rds
0.28Ω
Maximum Power Dissipation Pd
60W
Maximum Gate Source Voltage Vgs
±20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
19nC
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Width
10.67 mm
Length
2.79mm
Standards/Approvals
RoHS
Number of Elements per Chip
1
Automotive Standard
No
Country of Origin
China
Stock information temporarily unavailable.
€ 47.38
€ 0.948 Each (In a Tube of 50) (Exc. VAT)
50
€ 47.38
€ 0.948 Each (In a Tube of 50) (Exc. VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 50 | € 0.948 | € 47.38 |
| 100 - 200 | € 0.901 | € 45.03 |
| 250+ | € 0.852 | € 42.62 |
Technical Document
Specifications
Brand
VishayProduct Type
Power MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-263
Mount Type
Surface
Maximum Drain Source Resistance Rds
0.28Ω
Maximum Power Dissipation Pd
60W
Maximum Gate Source Voltage Vgs
±20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
19nC
Maximum Operating Temperature
175°C
Transistor Configuration
Single
Width
10.67 mm
Length
2.79mm
Standards/Approvals
RoHS
Number of Elements per Chip
1
Automotive Standard
No
Country of Origin
China


