Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.1 A
Maximum Drain Source Voltage
50 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
15.49mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
€ 1.547
Each (In a Tube of 50) (Exc. Vat)
50
€ 1.547
Each (In a Tube of 50) (Exc. Vat)
50
Buy in bulk
Quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | € 1.547 | € 77.36 |
100 - 200 | € 1.47 | € 73.50 |
250+ | € 1.393 | € 69.64 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
6.1 A
Maximum Drain Source Voltage
50 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
15.49mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details