Vishay Single 1 Type N-Channel Power MOSFET, 5.2 A, 200 V TO-263 IRF620SPBF

RS Stock No.: 180-8301Brand: VishayManufacturers Part No.: IRF620SPBFDistrelec Article No.: 30191565
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Technical Document

Specifications

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.2A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.8Ω

Typical Gate Charge Qg @ Vgs

14nC

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Number of Elements per Chip

1

Automotive Standard

No

Country of Origin

China

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Stock information temporarily unavailable.

€ 60.07

€ 1.201 Each (In a Tube of 50) (Exc. VAT)

Vishay Single 1 Type N-Channel Power MOSFET, 5.2 A, 200 V TO-263 IRF620SPBF

50

Available in multiples of 50
50€ 60.07
100€ 120.13
150€ 180.20
200€ 240.26
250€ 282.42
300€ 338.91
350€ 395.39
400€ 451.88
450€ 508.36
500€ 510.55
550€ 561.61
600€ 612.67
650€ 663.72
700€ 714.78
750€ 765.83

€ 60.07

€ 1.201 Each (In a Tube of 50) (Exc. VAT)

Vishay Single 1 Type N-Channel Power MOSFET, 5.2 A, 200 V TO-263 IRF620SPBF

Stock information temporarily unavailable.

50

Available in multiples of 50
50€ 60.07
100€ 120.13
150€ 180.20
200€ 240.26
250€ 282.42
300€ 338.91
350€ 395.39
400€ 451.88
450€ 508.36
500€ 510.55
550€ 561.61
600€ 612.67
650€ 663.72
700€ 714.78
750€ 765.83

QuantityUnit pricePer Tube
50 - 200€ 1.201€ 60.06
250 - 450€ 1.13€ 56.48
500 - 1200€ 1.021€ 51.06
1250 - 2450€ 0.961€ 48.05
2500+€ 0.901€ 45.05

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

5.2A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Mount Type

Surface

Maximum Drain Source Resistance Rds

0.8Ω

Typical Gate Charge Qg @ Vgs

14nC

Maximum Power Dissipation Pd

50W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Number of Elements per Chip

1

Automotive Standard

No

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more