Vishay Siliconix TrenchFET P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L SQJ415EP-T1_GE3

RS Stock No.: 178-3717Brand: Vishay SiliconixManufacturers Part No.: SQJ415EP-T1_GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

5mm

Transistor Material

Si

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Height

1.07mm

Minimum Operating Temperature

-55 °C

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€ 1,151.13

€ 0.384 Each (On a Reel of 3000) (Exc. VAT)

Vishay Siliconix TrenchFET P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L SQJ415EP-T1_GE3

3000

Available in multiples of 3000
3000€ 1,151.13
6000€ 2,302.25
9000€ 3,453.38
12000€ 4,604.51
15000€ 5,755.64
18000€ 6,906.76
21000€ 8,057.89
24000€ 9,209.02
27000€ 10,360.14
30000€ 11,511.27
33000€ 12,662.40
36000€ 13,813.52
39000€ 14,964.65
42000€ 16,115.78
45000€ 17,266.90

€ 1,151.13

€ 0.384 Each (On a Reel of 3000) (Exc. VAT)

Vishay Siliconix TrenchFET P-Channel MOSFET, 30 A, 40 V, 4-Pin PowerPAK SO-8L SQJ415EP-T1_GE3

Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000€ 1,151.13
6000€ 2,302.25
9000€ 3,453.38
12000€ 4,604.51
15000€ 5,755.64
18000€ 6,906.76
21000€ 8,057.89
24000€ 9,209.02
27000€ 10,360.14
30000€ 11,511.27
33000€ 12,662.40
36000€ 13,813.52
39000€ 14,964.65
42000€ 16,115.78
45000€ 17,266.90

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

5mm

Transistor Material

Si

Automotive Standard

AEC-Q101

Forward Diode Voltage

1.2V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more