Vishay Siliconix TrenchFET P-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40061EL_GE3
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China
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€ 1,359.53
€ 0.68 Each (On a Reel of 2000) (Exc. VAT)
2000
€ 1,359.53
€ 0.68 Each (On a Reel of 2000) (Exc. VAT)
Stock information temporarily unavailable.
2000
Stock information temporarily unavailable.
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Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Country of Origin
Taiwan, Province Of China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products