Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Country of Origin
China
€ 12.34
€ 0.494 Each (In a Pack of 25) (Exc. VAT)
Standard
25
€ 12.34
€ 0.494 Each (In a Pack of 25) (Exc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | € 0.494 | € 12.34 |
100 - 475 | € 0.349 | € 8.73 |
500 - 975 | € 0.291 | € 7.28 |
1000+ | € 0.247 | € 6.18 |
Technical Document
Specifications
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
60 V
Series
TrenchFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
600 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.46V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Country of Origin
China