P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3

RS Stock No.: 178-3663Brand: Vishay SiliconixManufacturers Part No.: Si2319DDS-T1-GE3
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.4mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.04mm

Height

1.02mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

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€ 0.14

Each (On a Reel of 3000) (Exc. Vat)

P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3

€ 0.14

Each (On a Reel of 3000) (Exc. Vat)

P-Channel MOSFET, 3.6 A, 40 V, 3-Pin SOT-23 Vishay Siliconix Si2319DDS-T1-GE3
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

3.6 A

Maximum Drain Source Voltage

40 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.4mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.04mm

Height

1.02mm

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China