N-Channel MOSFET, 38 A, 30 V, 8-Pin SOP Toshiba TPH8R903NL,LQ(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Height
0.95mm
Forward Diode Voltage
1.2V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Stock information temporarily unavailable.
Please check again later.
€ 7.34
€ 0.367 Each (In a Pack of 20) (Exc. VAT)
20
€ 7.34
€ 0.367 Each (In a Pack of 20) (Exc. VAT)
20
Buy in bulk
| Quantity | Unit price | Per Pack |
|---|---|---|
| 20 - 80 | € 0.367 | € 7.34 |
| 100 - 180 | € 0.336 | € 6.72 |
| 200 - 980 | € 0.329 | € 6.58 |
| 1000 - 1980 | € 0.316 | € 6.32 |
| 2000+ | € 0.309 | € 6.17 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
38 A
Maximum Drain Source Voltage
30 V
Series
U-MOSVIII-H
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
24 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
9.8 nC @ 10 V
Height
0.95mm
Forward Diode Voltage
1.2V
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products