Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details
MOSFET N-Channel, TK6 & TK7 Series, Toshiba
MOSFET Transistors, Toshiba
€ 7.10
€ 1.421 Each (In a Pack of 5) (Exc. VAT)
5
€ 7.10
€ 1.421 Each (In a Pack of 5) (Exc. VAT)
Stock information temporarily unavailable.
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 1.421 | € 7.10 |
| 25 - 45 | € 1.25 | € 6.25 |
| 50 - 95 | € 1.093 | € 5.47 |
| 100 - 245 | € 1.021 | € 5.10 |
| 250+ | € 0.966 | € 4.83 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
120 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
225 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.45mm
Height
15.1mm
Country of Origin
China
Product details


