Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
China
Product details
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
€ 83.90
€ 4.195 Each (Supplied in a Bag) (Exc. VAT)
Production pack (Bag)
20
€ 83.90
€ 4.195 Each (Supplied in a Bag) (Exc. VAT)
Stock information temporarily unavailable.
Production pack (Bag)
20
Stock information temporarily unavailable.
Quantity | Unit price | Per Bag |
---|---|---|
20 - 38 | € 4.195 | € 8.39 |
40 - 72 | € 3.687 | € 7.38 |
74 - 148 | € 3.485 | € 6.97 |
150+ | € 3.393 | € 6.79 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
155 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
165 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
48 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
China
Product details