Toshiba DTMOSIV N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

RS Stock No.: 133-2797Brand: ToshibaManufacturers Part No.: TK14G65W,RQ(S
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Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

35 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.8mm

Length

10.35mm

Forward Diode Voltage

1.7V

Height

4.46mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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€ 7.76

€ 1.552 Each (In a Pack of 5) (Exc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

5

Available in multiples of 5
5€ 7.76
10€ 15.52
15€ 23.29
20€ 31.05
25€ 38.81
30€ 46.57
35€ 54.34
40€ 62.10
45€ 69.86
50€ 77.62
55€ 85.39
60€ 93.15
65€ 100.91
70€ 108.67
75€ 116.43

€ 7.76

€ 1.552 Each (In a Pack of 5) (Exc. VAT)

Toshiba DTMOSIV N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

Stock information temporarily unavailable.

5

Available in multiples of 5
5€ 7.76
10€ 15.52
15€ 23.29
20€ 31.05
25€ 38.81
30€ 46.57
35€ 54.34
40€ 62.10
45€ 69.86
50€ 77.62
55€ 85.39
60€ 93.15
65€ 100.91
70€ 108.67
75€ 116.43

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Series

DTMOSIV

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

35 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

8.8mm

Length

10.35mm

Forward Diode Voltage

1.7V

Height

4.46mm

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more