Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Product details
MOSFET Transistors, Toshiba
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P.O.A.
Standard
1
P.O.A.
Standard
1
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
263 A
Maximum Drain Source Voltage
60 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.16mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Product details